LOW VOLTAGE, HIGH SPEED AND HIGH
TEMPERATURE OF 1T-1C DRAM IN CMOS 3CSiC
250nm TECHNOLOGY
Djilali Berbara1
, Mourad Hebali1,*, Miloud Abboun Abid1
, Mohammed Benzohra2
,
Djilali Chalabi1
and Abdelkader Saïdane1
1Department of Electrical Engineering, ENP Oran,
Laboratory CaSiCCE, 31000 Oran, Algeria
2Department of Networking and Telecommunications,
University of Rouen, Laboratory LECAP, 76000, France
ABSTRACT
The digital electronics field is becoming increasingly present in very hostile environments where the
temperature is very high. In these environments, the wide bandgap materials such as silicon carbide (SiC)
to replace silicon (Si). In this paper, we have studied the one-transistor one-capacitor Dynamic Random
Access memory cell (1T-1C DRAM) in CMOSiC-3C 250nm technology. To perform this work we have used
PSpice level 3 to study the DC characteristics of MOSiC-3C transistors 250nm technology, and then
depending on these characteristics, we studied the most important operations read/write and refresh
related to the 1T-1C DRAM cell. This is study has given very excellent results, where we found that our
DRAM cell operate under a low supply voltage 2V, wide temperature range from 27°C to 300°C and
characterized by high speed operations.
KEYWORDS
3C-SiC, PSpice level 3, 250nm technology, CMOS, 1T-1C DRAM.
KEYWORDS
3C-SiC, PSpice level 3, 250nm technology, CMOS, 1T-1C DRAM.
3C-SiC, PSpice level 3, 250nm technology, CMOS, 1T-1C DRAM.
1. INTRODUCTION
Silicon carbide (SiC), a wide bandgap (WBG) semiconductor material, considered as one of the
basic materials for making transistors that are working with high power, high frequency and high
temperature due to its better physical properties than silicon (Si). It has a high breakdown field, a
high saturation velocity of electrons and a high thermal conductivity [1], and has the potential to
overcome the limitations imposed by power devices made of Si base material [2-3-4]. However,
recent studies have shown that the Metal Oxide Semiconductor (MOS) transistors in silicon
carbide submicron technology work well in low voltage, low power, high frequency and high
temperature [5-6].
Dynamic Random Access Memory (DRAM) is a prominent product of semiconductor industry
[7] in which this cell is found in virtually every computer in use today, this is due to their
importance in the field of digital electronics. Among the proposed designs for the DRAM cell, the
concept of One-Transistor, One-Capacitor DRAM (1T-1C DRAM) appeared out more than 20
years ago [8] in which these devices are known as single-transistor capacitorless 1T-DRAM
memories in the case of integration [9-10]. Silicon technology has been widely used in the
manufacturing of these cells, because of the up notable achievements of this technology of
memory-related technology over the past two decades.
In this respect, we will propose other semiconductors to manufacture the DRAM cells as an
alternative to silicon technology.
In this work, we propose for the first time a new 1T-1C DRAM cell in CMOSiC-3C 250nm
technology. The first part of our work consists in presenting the use of PSpice level 3 as a model
for our MOSiC-3C transistors. Based on the equations of this model [11-12], we calculate
NMOSiC-3C and PMOSiC-3C transistors, then simulate output ID=f(VDS) and transfer ID=f(VGS)
characteristics for these transistors, and consequently, we integrate our transistors in the inverter
circuit to verify the operation of these transistors in switching mode. We will use our transistors
to study 1T-DRAM cell in the second part, through analyzing this cell characteristics Read/Write
and Refresh operations, and discuss key factors affecting device characteristics. Finally, we also
show the scalability of the proposed cell in this technology for operation in other conditions. Our
work is carried for 250 nm channel length; 3V and 2V supply voltage for MOSiC-3C transistors
and 1T-1C DRAM respectively at temperatures between 27°C and 300°C.
